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CY7C1351S-133AXC IC SRAM 4.5MBIT PARALLEL 100TQFP Cypress Semiconductor Corp

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CY7C1351S-133AXC IC SRAM 4.5MBIT PARALLEL 100TQFP Cypress Semiconductor Corp

Name: CY7C1351S133AXC IC SRAM 45MBIT PARALLEL 100TQFP Cypress Semiconductor Corp
Brand: Cypress Semiconductor Corp
Price: 1 USD

Brand Name : Cypress Semiconductor Corp

Model Number : CY7C1351S-133AXC

MOQ : 1

Price : Based on current price

Payment Terms : T/T

Supply Ability : In stock

Delivery Time : 3-5 work days

Packaging Details : anti-static bag & cardboard box

Memory Type : Volatile

Memory Format : SRAM

Technology : SRAM - Synchronous, SDR

Memory Size : 4.5Mbit

Memory Organization : 128K x 36

Memory Interface : Parallel

Clock Frequency : 133 MHz

Write Cycle Time - Word, Page : -

Access Time : 6.5 ns

Voltage - Supply : 3.135V ~ 3.6V

Operating Temperature : 0°C ~ 70°C (TA)

Mounting Type : Surface Mount

Package / Case : 100-LQFP

Supplier Device Package : 100-TQFP (14x14)

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Product Details

Functional Description

The CY7C1351 is a 3.3V, 128K by 36 Synchronous Flow-Through Burst SRAM designed specifically to support unlimited true back-to-back Read/Write operations without the insertion of wait states. The CY7C1351 is equipped with the advanced No Bus Latency™ (NoBL™) logic required to enable consecutive Read/Write operations with data being transferred on every clock cycle. This feature dramatically improves the throughput of data through the SRAM, especially in systems that require frequent Write/Read transitions. The CY7C1351 is pin/functionally compatible to ZBT SRAMs IDT71V547, MT55L128L36F, and MCM63Z737.

Features

• Pin compatible and functionally equivalent to ZBT™ devices IDT71V547, MT55L128L36F, and MCM63Z737
• Supports 66-MHz bus operations with zero wait states
— Data is transferred on every clock
• Internally self-timed output buffer control to eliminate the need to use OE
• Registered inputs for Flow-Through operation
• Byte Write capability
• 128K x 36 common I/O architecture
• Single 3.3V power supply
• Fast clock-to-output times
— 11.0 ns (for 66-MHz device)
— 12.0 ns (for 50-MHz device)
— 14.0 ns (for 40-MHz device)
• Clock Enable (CEN) pin to suspend operation
• Synchronous self-timed writes
• Asynchronous Output Enable
• JEDEC-standard 100 TQFP package
• Burst Capability—linear or interleaved burst order Low standby power

Specifications

Attribute	Attribute Value
Manufacturer	Cypress Semiconductor
Product Category	Memory ICs
Series	-
Packaging	Tray
Package-Case	100-LQFP
Operating-Temperature	0°C ~ 70°C (TA)
Interface	Parallel
Voltage-Supply	3.135 V ~ 3.6 V
Supplier-Device-Package	100-TQFP (14x14)
Memory Capacity	4.5M (128K x 36)
Memory-Type	SRAM - Synchronous
Speed	133MHz
Format-Memory	RAM

Descriptions

SRAM - Synchronous Memory IC 4.5Mb (128K x 36) Parallel 133MHz 6.5ns 100-TQFP (14x14)

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